Materials for High-Temperature Semiconductor Devices
By:"Commission on Engineering and Technical Systems","Committee on Materials for High-Temperature Semiconductor Devices","National Research Council","Division on Engineering and Physical Sciences","National Materials Advisory Board"
Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
This Book was ranked 23 by Google Books for keyword RF and Mm Wave Power Generation in Silicon.
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